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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF317/D NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in 30 - 200 MHz frequency range. * Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB * Built-In Matching Network for Broadband Operation * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR * Gold Metallization System for High Reliability * High Output Saturation Power -- Ideally Suited for 30 W Carrier/120 W Peak AM Amplifier Service * Guaranteed Performance in Broadband Test Fixture MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Collector Current -- Peak (10 seconds) Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 35 65 4.0 12 18 270 1.54 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C MRF317 100 W, 30 - 200 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316-01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.65 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 35 65 65 4.0 -- -- -- -- -- -- -- -- -- -- 5.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 10 25 80 -- NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. REV 7 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MRF317 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob -- 150 175 pF FUNCTIONAL TESTS (Figure 2) Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 100 W, f = 150 MHz, IC (Max) = 6.5 Adc) Collector Efficiency (VCC = 28 Vdc, Pout = 100 W, f = 150 MHz, IC (Max) = 6.5 Adc) Load Mismatch (VCC = 28 Vdc, Pout = 100 W CW, f = 150 MHz, VSWR = 30:1 all phase angles) GPE No Degradation in Output Power 9.0 55 10 60 -- -- dB % MRF317 2 MOTOROLA RF DEVICE DATA R2 R3 RFC3 R1 C5 RFC2 C11 RFC4 RFC1 RF INPUT L1 C1 L2 DUT C2 C3 C4 C6 C7 C8 C9 L3 L4 C10 RF OUTPUT C12 RFC5 C13 RFC6 DC + 28 Vdc C1, C9 -- 39 pF, 100 mil ATC C2 -- 120 pF, 100 mil ATC C3, C4 -- 360 pF, 100 mil ATC C5 -- 1000 pF Dipped Mica C6, C7 -- 100 pF, 100 mil ATC* C8 -- 18 pF, 100 mil ATC* C10 -- 43 pF, 100 mil ATC C11 -- 60 pF, Underwood C12 -- 0.1 F Erie Redcap C13 -- 1000 pF, Underwood J102 L1 -- 50 nH L2 -- 6.0 nH L3 -- 8.0 nH L4 -- 32 nH RFC1 -- 0.15 H Molded Coil RFC2, RFC3 -- Ferroxcube Bead 56-590-65/3B RFC4 -- 1 Turn, #18 Wire, 2.0 L RFC5 -- Ferroxcube VK200 19/4B RFC6 -- 7 Turns, #18 Wire, 0.3 ID R1 -- 10 1/2 W R2, R3 -- 10 1.0 W *Combination of C6, C7, C8 equals 220 pF. Figure 1. 110 - 160 MHz Broadband Amplifier -- Test Fixture Schematic 70 10 G PE , POWER GAIN (dB) 60 EFFICIENCY, (%) 9 50 8 40 Pout = 100 W VCC = 28 V 7 Pout = 100 W VCC = 28 V 30 6 110 135 f, FREQUENCY (MHz) 160 20 110 135 f, FREQUENCY (MHz) 160 Figure 2. Power Gain versus Frequency Broadband Test Fixture Figure 3. Efficiency versus Frequency Broadband Test Fixture 6 5 INPUT VSWR Pout , OUTPUT POWER (WATTS) Pout = 100 W VCC = 28 V 140 VCC = 28 V 120 100 80 60 40 20 0.2 f = 30 MHz 50 MHz 4 3 200 MHz 150 MHz 100 MHz 2 1 110 135 f, FREQUENCY (MHz) 160 0.5 1 2 5 10 20 Pin, INPUT POWER (WATTS) Figure 4. Input VSWR versus Frequency Broadband Test Fixture MOTOROLA RF DEVICE DATA Figure 5. Output Power versus Input Power MRF317 3 TYPICAL PERFORMANCE CURVES G PE , COMMON EMITTER POWER GAIN (dB) 120 17 16 15 14 13 12 11 10 9 8 20 40 60 80 100 120 140 160 180 200 20 12 16 20 24 Pout, POWER OUTPUT (WATTS) Pout = 100 W VCC = 28 V 100 6W 80 Pin = 10 W 8W 60 40 f = 100 MHz 28 f, FREQUENCY (MHz) VCC, SUPPLY VOLTAGE (VOLTS) Figure 6. Power Gain versus Frequency Figure 7. Power Output versus Supply Voltage 120 Pout, POWER OUTPUT (WATTS) Pout, POWER OUTPUT (WATTS) 100 Pin = 10 W 8W 80 6W 100 Pin = 10 W 8W 80 6W 60 60 40 f = 150 MHz 20 12 16 20 24 28 40 f = 200 MHz 20 12 16 20 24 28 VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS) Figure 8. Power Output versus Supply Voltage Figure 9. Power Output versus Supply Voltage 1.0 2.0 3.0 4.0 0 1.0 125 Zin 50 200 175 100 1.0 2.0 2.0 3.0 200 150 175 f MHz 30 50 100 125 150 175 200 VCC = 28 V, Pout = 100 W Zin OHMS 1.2 - j2.0 1.0 - j1.8 0.3 + j0.7 0.3 + j1.0 0.6 + j1.3 1.0 + j1.5 0.9 + j1.0 ZOL* OHMS 4.3 - j5.0 4.0 - j4.9 2.0 - j2.3 1.9 - j1.9 1.9 - j1.3 1.6 - j0.6 1.1 - j0.6 f = 30 MHz 100 125 ZOL* 150 3.0 4.0 5.0 50 f = 30 MHz 6.0 ZOL* = Conjugate of the optimum load impedance into which the device output ZOL* = operates at a given output power, voltage and frequency. Figure 10. Series Equivalent Input-Output Impedance MRF317 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS D R 3 F 4 K NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 1 Q 2 L B J E N H A U STYLE 1: PIN 1. 2. 3. 4. C DIM A B C D E F H J K L N Q R U EMITTER COLLECTOR EMITTER BASE CASE 316-01 ISSUE D MOTOROLA RF DEVICE DATA MRF317 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF317 6 *MRF317/D* MRF317/D MOTOROLA RF DEVICE DATA |
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